Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates: Fid-Bau Portal

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Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Zhang, K. / Liang, H. / Song, S. / Yang, D. / Shen, R. / Liu, Y. / Xia, X. / Luo, Y. / Du, G.

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Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Zhang, K. / Liang, H. / Song, S. / Yang, D. / Shen, R. / Liu, Y. / Xia, X. / Luo, Y. / Du, G.

Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Zhang, K. / Liang, H. / Song, S. / Yang, D. / Shen, R. / Liu, Y. / Xia, X. / Luo, Y. / Du, G.

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Order at Subito €

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Document information

Title:

Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Contributors:

Zhang, K. (author) / Liang, H. (author) / Song, S. (author) / Yang, D. (author) / Shen, R. (author) / Liu, Y. (author) / Xia, X. (author) / Luo, Y. (author) / Du, G. (author)

Published in:

JOURNAL OF TESTING AND EVALUATION ; 41 ; 798-803

Publication date:

2013-01-01

Size:

6 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

DDC: 620

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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