A platform for research: civil engineering, architecture and urbanism
Optical properties of Si0.8Ge0.2/Si multiple quantum wells
Optical properties of Si0.8Ge0.2/Si multiple quantum wells
Optical properties of Si0.8Ge0.2/Si multiple quantum wells
Shim, K.H. (author) / Kil, Y.-H. (author) / Lee, H.K. (author) / Shin, M.I. (author) / Jeong, T.S. (author) / Kang, S. (author) / Choi, C.-J. (author) / Kim, T.S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 128-132
2011-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films
British Library Online Contents | 2008
|Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films
British Library Online Contents | 2010
|Optical Properties of InGaN/GaN Multiple Quantum Wells
British Library Online Contents | 1998
|Optical properties of InGaN quantum wells
British Library Online Contents | 1999
|