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Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films

Chang, Y. M. / Dai, C. L. / Cheng, T. C. / Hsu, C. W.

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Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films

Chang, Y. M. / Dai, C. L. / Cheng, T. C. / Hsu, C. W.

Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films

Chang, Y. M. / Dai, C. L. / Cheng, T. C. / Hsu, C. W.

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Order at Subito €

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Document information

Title:

Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films

Contributors:

Chang, Y. M. (author) / Dai, C. L. (author) / Cheng, T. C. (author) / Hsu, C. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 3105-3109

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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