Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer: Fid-Bau Portal

Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tunc, T. / Altindal, S. / Uslu, I. / Dokme, I. / Uslu, H.

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Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tunc, T. / Altindal, S. / Uslu, I. / Dokme, I. / Uslu, H.

Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Tunc, T. / Altindal, S. / Uslu, I. / Dokme, I. / Uslu, H.

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Title:

Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Contributors:

Tunc, T. (author) / Altindal, S. (author) / Uslu, I. (author) / Dokme, I. (author) / Uslu, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 139-145

Publication date:

2011-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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