Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K

Herrero, A. M. / Gerger, A. M. / Gila, B. P. et al. | British Library Online Contents | 2007

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme, I. / Altindal, S. / Bulbul, M. M. | British Library Online Contents | 2006

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

Acar, S. / Karadeniz, S. / Tugluoglu, N. et al. | British Library Online Contents | 2004

Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. et al. | British Library Online Contents | 2010

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

Dogan, H. / Korkut, H. / Yldrm, N. et al. | British Library Online Contents | 2007