A platform for research: civil engineering, architecture and urbanism
Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices
Zhang, D. (author) / Bian, J. M. (author) / Qin, F. W. (author) / Wang, J. (author) / Pan, L. (author) / Zhao, J. M. (author) / Zhao, Y. (author) / Bai, Y. Z. (author) / Du, G. T. (author)
MATERIALS RESEARCH BULLETIN ; 46 ; 1582-1585
2011-01-01
4 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of Highly c-axis Oriented LiNbO~3 Films on Diamond Substrates for SAW Devices
British Library Online Contents | 2010
|Analysis of Interface between Free-Standing Diamond Films and Mo Substrates
British Library Online Contents | 2005
|Fracture surface analysis of free-standing diamond films
British Library Online Contents | 1994
|Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition
British Library Online Contents | 2002
|Nucleation of oriented diamond films on nickel substrates
British Library Online Contents | 1993
|