Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers: Fid-Bau Portal

Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers

Li, Y. / Jie, W. / Kang, R. / Gao, H.

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Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers

Li, Y. / Jie, W. / Kang, R. / Gao, H.

Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers

Li, Y. / Jie, W. / Kang, R. / Gao, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers

Contributors:

Li, Y. (author) / Jie, W. (author) / Kang, R. (author) / Gao, H. (author)

Published in:

RARE METALS -BEIJING- ENGLISH EDITION ; 30 ; 381-386

Publication date:

2011-01-01

Size:

6 pages

ISSN:

1001-0521

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 669

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