Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors: Fid-Bau Portal

Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Zan, H. W. / Tsai, W. W. / Chen, C. H. / Tsai, C. C.

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Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Zan, H. W. / Tsai, W. W. / Chen, C. H. / Tsai, C. C.

Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Zan, H. W. / Tsai, W. W. / Chen, C. H. / Tsai, C. C.

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Check availability in my library

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Document information

Title:

Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors

Contributors:

Zan, H. W. (author) / Tsai, W. W. (author) / Chen, C. H. (author) / Tsai, C. C. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 23 ; 4237-4242

Publication date:

2011-01-01

Size:

6 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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