Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering: Fid-Bau Portal

Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering

Li, X. / He, F. / Liu, G. / Huang, Y. / Pan, C. / Guo, C.

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Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering

Li, X. / He, F. / Liu, G. / Huang, Y. / Pan, C. / Guo, C.

Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering

Li, X. / He, F. / Liu, G. / Huang, Y. / Pan, C. / Guo, C.

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Check availability in my library

Order at Subito €

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Document information

Title:

Fabrication of Ge quantum dots doped TiO2 films with high optical absorption properties via layer-by-layer ion-beam sputtering

Contributors:

Li, X. (author) / He, F. (author) / Liu, G. (author) / Huang, Y. (author) / Pan, C. (author) / Guo, C. (author)

Published in:

MATERIALS LETTERS ; 67 ; 369-372

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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