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    Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors

    New search for: Dezaki, H.
    New search for: Jing, M.L.
    New search for: Balasekaran, S.
    New search for: Tanabe, T.
    New search for: Oyama, Y.
    New search for: Wang, D.

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    Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors

    New search for: Dezaki, H.
    New search for: Jing, M.L.
    New search for: Balasekaran, S.
    New search for: Tanabe, T.
    New search for: Oyama, Y.
    New search for: Wang, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors

    New search for: Dezaki, H.
    New search for: Jing, M.L.
    New search for: Balasekaran, S.
    New search for: Tanabe, T.
    New search for: Oyama, Y.
    New search for: Wang, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors

    Contributors:

    Dezaki, H. (author) / Jing, M.L. (author) / Balasekaran, S. (author) / Tanabe, T. (author) / Oyama, Y. (author) / Wang, D.

    Published in:

    Advanced Materials in Microwaves and Optics ; 66-69

    KEY ENGINEERING MATERIALS ; 500

    Publication date:

    2012-01-01

    Size:

    4 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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