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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Kumar, M. (author) / Bhat, T. N. (author) / Roul, B. (author) / Rajpalke, M. K. (author) / Kalghatgi, A. T. (author) / Krupanidhi, S. B. (author)
MATERIALS RESEARCH BULLETIN ; 47 ; 1306-1309
2012-01-01
4 pages
Article (Journal)
English
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