Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Kumar, M. (Autor:in) / Bhat, T. N. (Autor:in) / Roul, B. (Autor:in) / Rajpalke, M. K. (Autor:in) / Kalghatgi, A. T. (Autor:in) / Krupanidhi, S. B. (Autor:in)
MATERIALS RESEARCH BULLETIN ; 47 ; 1306-1309
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
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