A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer: Fid-Bau Portal

A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

Jia, H. / Zhang, H. / Yang, Y.

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A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

Jia, H. / Zhang, H. / Yang, Y.

A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

Jia, H. / Zhang, H. / Yang, Y.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

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Document information

Title:

A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer

Contributors:

Jia, H. (author) / Zhang, H. (author) / Yang, Y. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 2-5

Publication date:

2012-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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