Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches: Fid-Bau Portal

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches

Hettler, C. / Sullivan, W.W. / Dickens, J.

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Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches

Hettler, C. / Sullivan, W.W. / Dickens, J.

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches

Hettler, C. / Sullivan, W.W. / Dickens, J.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches

Contributors:

Hettler, C. (author) / Sullivan, W.W. (author) / Dickens, J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 301-304

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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