Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate: Fid-Bau Portal

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Ishikawa, Y. / Sato, K. / Okamoto, Y. / Hayashi, N. / Yao, Y. / Sugawara, Y.

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Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Ishikawa, Y. / Sato, K. / Okamoto, Y. / Hayashi, N. / Yao, Y. / Sugawara, Y.

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Ishikawa, Y. / Sato, K. / Okamoto, Y. / Hayashi, N. / Yao, Y. / Sugawara, Y.

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Document information

Title:

Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate

Contributors:

Ishikawa, Y. (author) / Sato, K. (author) / Okamoto, Y. (author) / Hayashi, N. (author) / Yao, Y. (author) / Sugawara, Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 383-386

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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