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Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
Omar, S.U. (author) / Song, H.Z. (author) / Sudarshan, T.S. (author) / Chandrashekhar, M.V.S. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 399-402
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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