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In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate
Feng, G. (author) / Suda, J. (author) / Kimoto, T. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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