A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
Lelis, A.J. (author) / Habersat, D. (author) / Green, R. (author) / Goldsman, N. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 465-468
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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