A platform for research: civil engineering, architecture and urbanism
Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
Barbot, J.F. (author) / Leclerc, S. (author) / Tromas, C. (author) / Audurier, V. (author) / Declemy, A. (author) / Texier, M. (author) / Beaufort, M.F. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 485-488
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
British Library Online Contents | 2000
|Growth Induced Stacking Fault Formation in 4H-SiC
British Library Online Contents | 2007
|Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study
British Library Online Contents | 2011
|Strain-induced transformation between vacancy voids and stacking fault tetrahedra in Cu
British Library Online Contents | 2019
|Formation of long-period stacking fault structures in magnesium alloys
British Library Online Contents | 2016
|