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Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Hoelzl, R. (author) / Range, K. J. (author) / Fabry, L. (author) / Hage, J. (author) / Raineri, V. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 95 - 98
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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