Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation: Fid-Bau Portal

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Hassan, J. / Virojanadara, C. / Meyer, A. / Ivanov, I.G. / Flege, J.I. / Watcharinyanon, S. / Falta, J. / Johansson, L.I. / Janzen, E.

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Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Hassan, J. / Virojanadara, C. / Meyer, A. / Ivanov, I.G. / Flege, J.I. / Watcharinyanon, S. / Falta, J. / Johansson, L.I. / Janzen, E.

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Hassan, J. / Virojanadara, C. / Meyer, A. / Ivanov, I.G. / Flege, J.I. / Watcharinyanon, S. / Falta, J. / Johansson, L.I. / Janzen, E.

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Title:

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Contributors:

Hassan, J. (author) / Virojanadara, C. (author) / Meyer, A. (author) / Ivanov, I.G. (author) / Flege, J.I. (author) / Watcharinyanon, S. (author) / Falta, J. (author) / Johansson, L.I. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 605-608

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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