A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions
Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions
Suppression of Hole Current in Graphene Transistors with n-Type Doped SiC Source/Drain Regions
Nagahisa, Y. (author) / Tokumitsu, E. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 679-682
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors
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