Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation: Fid-Bau Portal

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Basile, A.F. / Ahyi, A.C. / Feldman, L.C. / Williams, J.R. / Mooney, P.M.

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Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Basile, A.F. / Ahyi, A.C. / Feldman, L.C. / Williams, J.R. / Mooney, P.M.

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Basile, A.F. / Ahyi, A.C. / Feldman, L.C. / Williams, J.R. / Mooney, P.M.

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Check availability in my library

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Document information

Title:

Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation

Contributors:

Basile, A.F. (author) / Ahyi, A.C. (author) / Feldman, L.C. (author) / Williams, J.R. (author) / Mooney, P.M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 757-760

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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