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    Passivation and Depassivation of Interface Traps at the SiO~2/4H-SiC Interface by Potassium Ions

    New search for: Hermannsson, P.G.
    New search for: Sveinbjornsson, E.O.

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    Passivation and Depassivation of Interface Traps at the SiO~2/4H-SiC Interface by Potassium Ions

    New search for: Hermannsson, P.G.
    New search for: Sveinbjornsson, E.O.

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    Passivation and Depassivation of Interface Traps at the SiO~2/4H-SiC Interface by Potassium Ions

    New search for: Hermannsson, P.G.
    New search for: Sveinbjornsson, E.O.

    Access

    Access via TIB
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    Document information
    Title:

    Passivation and Depassivation of Interface Traps at the SiO~2/4H-SiC Interface by Potassium Ions

    Contributors:

    Hermannsson, P.G. (author) / Sveinbjornsson, E.O. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 717/720 ; 761-764

    Publication date:

    2012-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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