Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing

    New search for: Pejovic, M.
    New search for: Ristic, G.
    New search for: Jaksic, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing

    New search for: Pejovic, M.
    New search for: Ristic, G.
    New search for: Jaksic, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing

    New search for: Pejovic, M.
    New search for: Ristic, G.
    New search for: Jaksic, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing

    Contributors:

    Pejovic, M. (author) / Ristic, G. (author) / Jaksic, A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 108 ; 141-148

    Publication date:

    1997-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing

    Ristic, G. S. / Pejovic, M. M. / Jaksic, A. B. | British Library Online Contents | 2006

    Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs

    Ristic, G. S. / Pejovic, M. M. / Jaksic, A. B. | British Library Online Contents | 2003

    Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs

    Jaikumar, M.G. / Karmalkar, S. | British Library Online Contents | 2012

    Passivation and Depassivation of Interface Traps at the SiO~2/4H-SiC Interface by Potassium Ions

    Hermannsson, P.G. / Sveinbjornsson, E.O. | British Library Online Contents | 2012

    Hydrogen Passivation of Iron-Related Hole Traps in Silicon

    Kouketsu, M. / Watanabe, K. / Isomae, S. | British Library Online Contents | 1995

    Back to top