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Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Korucu, D. (author) / Efeoglu, H. (author) / Turut, A. (author) / Altindal, S. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 480-485
2012-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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