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Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K
Korucu, D. (Autor:in) / Efeoglu, H. (Autor:in) / Turut, A. (Autor:in) / Altindal, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 480-485
01.01.2012
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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