Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios: Fid-Bau Portal

Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios

Polojarvi, V. / Gubanov, A. / Schramm, A. / Koskinen, R. / Paajaste, J. / Salmi, J. / Suomalainen, S. / Guina, M.

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Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios

Polojarvi, V. / Gubanov, A. / Schramm, A. / Koskinen, R. / Paajaste, J. / Salmi, J. / Suomalainen, S. / Guina, M.

Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios

Polojarvi, V. / Gubanov, A. / Schramm, A. / Koskinen, R. / Paajaste, J. / Salmi, J. / Suomalainen, S. / Guina, M.

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Document information

Title:

Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios

Contributors:

Polojarvi, V. (author) / Gubanov, A. (author) / Schramm, A. (author) / Koskinen, R. (author) / Paajaste, J. (author) / Salmi, J. (author) / Suomalainen, S. (author) / Guina, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 177 ; 1103-1107

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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