A platform for research: civil engineering, architecture and urbanism
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Fernández-Delgado, N. (author) / Herrera, M. (author) / Chisholm, M.F. (author) / Kamarudin, M.A. (author) / Zhuang, Q.D. (author) / Hayne, M. (author) / Molina, S.I. (author)
Applied surface science ; 395 ; 136-139
2017-01-01
4 pages
Article (Journal)
English
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2017
|Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD
British Library Online Contents | 2004
|Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
British Library Online Contents | 2011
|Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios
British Library Online Contents | 2012
|The effects of thermal annealing in self-assembled Ge/Si quantum dots
British Library Online Contents | 2007
|