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    Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

    New search for: Abe, T.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

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    Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

    New search for: Abe, T.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

    New search for: Abe, T.
    New search for: Yamada-Kaneta, H.
    New search for: Sakai, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Mono Vacancy Generation by Short Annealing in Nitrogen Doped FZ Silicon Wafers

    Contributors:

    Abe, T. (author) / Yamada-Kaneta, H. / Sakai, A.

    Published in:

    Defects-Recognition, Imaging and Physics in Semiconductors XIV ; 193-198

    MATERIALS SCIENCE FORUM ; 725

    Publication date:

    2012-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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