Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature: Fid-Bau Portal

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Kim, J.-H. / Kim, J.-W. / Roh, J.-H. / Lee, K.-J. / Do, K.-M. / Shin, J.-H. / Koo, S.-M. / Moon, B.-M.

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Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Kim, J.-H. / Kim, J.-W. / Roh, J.-H. / Lee, K.-J. / Do, K.-M. / Shin, J.-H. / Koo, S.-M. / Moon, B.-M.

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Kim, J.-H. / Kim, J.-W. / Roh, J.-H. / Lee, K.-J. / Do, K.-M. / Shin, J.-H. / Koo, S.-M. / Moon, B.-M.

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Title:

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Contributors:

Kim, J.-H. (author) / Kim, J.-W. (author) / Roh, J.-H. (author) / Lee, K.-J. (author) / Do, K.-M. (author) / Shin, J.-H. (author) / Koo, S.-M. (author) / Moon, B.-M. (author) / Boo, J.-H. / Ahn, H.

Published in:

Proceedings of the IFFM2011 (2011 International Forum on Functional Materials) and AFM-2 (2nd Special Symposium on Advances in Functional Materials) Jeju island, Korea 28-31 July 2011 ; 2923-2926

MATERIALS RESEARCH BULLETIN ; 47

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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