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Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors
Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors
Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors
Ding, Xingwei (author) / Zhang, Jianhua (author) / Shi, Weimin (author) / Ding, He (author) / Zhang, Hao (author) / Li, Jun (author) / Jiang, Xueyin (author) / Zhang, Zhilin (author) / Fu, Chaoying (author)
Materials science in semiconductor processing ; 29 ; 326-330
2015-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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