A platform for research: civil engineering, architecture and urbanism
Preferential growth of Si films on 6H-SiC(0001) C-face
Preferential growth of Si films on 6H-SiC(0001) C-face
Preferential growth of Si films on 6H-SiC(0001) C-face
Xie, L. f. (author) / Chen, Z. m. (author) / Li, L. b. (author) / Yang, C. (author) / He, X. m. (author) / Ye, N. (author)
APPLIED SURFACE SCIENCE ; 261 ; 88-91
2012-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
TEM characterization of Si films grown on 6H–SiC (0001) C-face
British Library Online Contents | 2013
|Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
British Library Online Contents | 2013
|Growth of Ultrathin Ag Films on 4H-SiC(0001)
British Library Online Contents | 2004
|Photoemission study of 6H-SiC(0001)Si face
British Library Online Contents | 1997
|Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate
British Library Online Contents | 2011
|