Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik, C. / Bulutay, C. | British Library Online Contents | 2007

Electronic structures of unoccupied states in lithium phthalocyanine thin films of different polymorphs studied by IPES

Sato, N. / Yoshida, H. / Tsutsumi, K. et al. | British Library Online Contents | 2003

Crystal Growth, Structure, and Electronic Band Structure of -4T Polymorphs

Siegrist, T. / Kloc, C. / Laudise, R. A. et al. | British Library Online Contents | 1998

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Lucovsky, G. / Lee, S. / Long, J. P. et al. | British Library Online Contents | 2008

Superstructure of C~3S Polymorphs

Iwashima, M. / Shirakami, T. / Urabe, K. | British Library Online Contents | 1997