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    Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

    New search for: Lucovsky, G.
    New search for: Lee, S.
    New search for: Long, J. P.
    New search for: Seo, H.
    New search for: Luning, J.

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    Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

    New search for: Lucovsky, G.
    New search for: Lee, S.
    New search for: Long, J. P.
    New search for: Seo, H.
    New search for: Luning, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

    New search for: Lucovsky, G.
    New search for: Lee, S.
    New search for: Long, J. P.
    New search for: Seo, H.
    New search for: Luning, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

    Contributors:

    Lucovsky, G. (author) / Lee, S. (author) / Long, J. P. (author) / Seo, H. (author) / Luning, J. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 7933-7937

    Publication date:

    2008-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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