High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene: Fid-Bau Portal

High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

Fan, J. / Yuen, J. D. / Cui, W. / Seifter, J. / Mohebbi, A. R. / Wang, M. / Zhou, H. / Heeger, A. / Wudl, F.

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High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

Fan, J. / Yuen, J. D. / Cui, W. / Seifter, J. / Mohebbi, A. R. / Wang, M. / Zhou, H. / Heeger, A. / Wudl, F.

High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

Fan, J. / Yuen, J. D. / Cui, W. / Seifter, J. / Mohebbi, A. R. / Wang, M. / Zhou, H. / Heeger, A. / Wudl, F.

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Title:

High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

Contributors:

Fan, J. (author) / Yuen, J. D. (author) / Cui, W. (author) / Seifter, J. (author) / Mohebbi, A. R. (author) / Wang, M. (author) / Zhou, H. (author) / Heeger, A. (author) / Wudl, F. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 24 ; 6164-6168

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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