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    Crack Behavior of Si-Doped GaAs Crystals Grown by Pulling-Down Method

    New search for: Fang, Y.Z.
    New search for: Jin, M.
    New search for: He, Q.B.
    New search for: Shen, H.
    New search for: Jiang, G.J.
    New search for: Xu, J.Y.
    New search for: Zhang, C.
    New search for: Zhang, L.

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    Crack Behavior of Si-Doped GaAs Crystals Grown by Pulling-Down Method

    New search for: Fang, Y.Z.
    New search for: Jin, M.
    New search for: He, Q.B.
    New search for: Shen, H.
    New search for: Jiang, G.J.
    New search for: Xu, J.Y.
    New search for: Zhang, C.
    New search for: Zhang, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Crack Behavior of Si-Doped GaAs Crystals Grown by Pulling-Down Method

    New search for: Fang, Y.Z.
    New search for: Jin, M.
    New search for: He, Q.B.
    New search for: Shen, H.
    New search for: Jiang, G.J.
    New search for: Xu, J.Y.
    New search for: Zhang, C.
    New search for: Zhang, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Crack Behavior of Si-Doped GaAs Crystals Grown by Pulling-Down Method

    Contributors:

    Fang, Y.Z. (author) / Jin, M. (author) / He, Q.B. (author) / Shen, H. (author) / Jiang, G.J. (author) / Xu, J.Y. (author) / Zhang, C. / Zhang, L.

    Published in:

    Materials Science and Nanotechnology I ; 88-91

    KEY ENGINEERING MATERIALS ; 531/532

    Publication date:

    2013-01-01

    Size:

    4 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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