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    Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

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    New search for: Chao, S.
    New search for: Guo, Y.Q.
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    New search for: Huang, R.
    New search for: Zhang, C.
    New search for: Zhang, L.

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    Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

    New search for: Wang, X.
    New search for: Chao, S.
    New search for: Guo, Y.Q.
    New search for: Song, J.
    New search for: Huang, R.
    New search for: Zhang, C.
    New search for: Zhang, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

    New search for: Wang, X.
    New search for: Chao, S.
    New search for: Guo, Y.Q.
    New search for: Song, J.
    New search for: Huang, R.
    New search for: Zhang, C.
    New search for: Zhang, L.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure

    Contributors:

    Wang, X. (author) / Chao, S. (author) / Guo, Y.Q. (author) / Song, J. (author) / Huang, R. (author) / Zhang, C. / Zhang, L.

    Published in:

    Materials Science and Nanotechnology I ; 547-550

    KEY ENGINEERING MATERIALS ; 531/532

    Publication date:

    2013-01-01

    Size:

    4 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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