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Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Escobedo-Cousin, E. / Vassilevski, K. / Hopf, T. / Wright, N. / O Neill, A. / Horsfall, A. / Goss, J. / Cumpson, P.

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Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Escobedo-Cousin, E. / Vassilevski, K. / Hopf, T. / Wright, N. / O Neill, A. / Horsfall, A. / Goss, J. / Cumpson, P.

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Escobedo-Cousin, E. / Vassilevski, K. / Hopf, T. / Wright, N. / O Neill, A. / Horsfall, A. / Goss, J. / Cumpson, P.

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Title:

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Contributors:

Escobedo-Cousin, E. (author) / Vassilevski, K. (author) / Hopf, T. (author) / Wright, N. (author) / O Neill, A. (author) / Horsfall, A. (author) / Goss, J. (author) / Cumpson, P. (author) / Lebedev, A.A. / Davydov, S.Y.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 121-124

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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