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Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Hung, C.C. / Chen, Y.S. / Yen, C.T. / Lee, C.Y. / Lee, L.S. / Tsai, M.J.

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Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Hung, C.C. / Chen, Y.S. / Yen, C.T. / Lee, C.Y. / Lee, L.S. / Tsai, M.J.

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Hung, C.C. / Chen, Y.S. / Yen, C.T. / Lee, C.Y. / Lee, L.S. / Tsai, M.J.

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Title:

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Contributors:

Hung, C.C. (author) / Chen, Y.S. (author) / Yen, C.T. (author) / Lee, C.Y. (author) / Lee, L.S. (author) / Tsai, M.J. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 711-714

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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