Influence of Nitrogen Implantation on Electrical Properties of Al/SiO~2/4H-SiC MOS Structure: Fid-Bau Portal

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO~2/4H-SiC MOS Structure

Krol, K. / Sochacki, M. / Turek, M. / Zuk, J. / Przewlocki, H.M. / Gutt, T. / Borowicz, P. / Guziewicz, M. / Szuber, J. / Kwoka, M.

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Influence of Nitrogen Implantation on Electrical Properties of Al/SiO~2/4H-SiC MOS Structure

Krol, K. / Sochacki, M. / Turek, M. / Zuk, J. / Przewlocki, H.M. / Gutt, T. / Borowicz, P. / Guziewicz, M. / Szuber, J. / Kwoka, M.

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO~2/4H-SiC MOS Structure

Krol, K. / Sochacki, M. / Turek, M. / Zuk, J. / Przewlocki, H.M. / Gutt, T. / Borowicz, P. / Guziewicz, M. / Szuber, J. / Kwoka, M.

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Title:

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO~2/4H-SiC MOS Structure

Contributors:

Krol, K. (author) / Sochacki, M. (author) / Turek, M. (author) / Zuk, J. (author) / Przewlocki, H.M. (author) / Gutt, T. (author) / Borowicz, P. (author) / Guziewicz, M. (author) / Szuber, J. (author) / Kwoka, M. (author)

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 733-736

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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