A platform for research: civil engineering, architecture and urbanism
Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
Kosugi, R. (author) / Sakuma, Y. (author) / Kojima, K. (author) / Itoh, S. (author) / Nagata, A. (author) / Yatsuo, T. (author) / Tanaka, Y. (author) / Okumura, H. (author) / Lebedev, A.A. / Davydov, S.Y.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Filling of Deep Trench by Epitaxial SiC Growth
British Library Online Contents | 2013
|Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial Growth
British Library Online Contents | 2014
|SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
British Library Online Contents | 2003
|