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In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500^oC
In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500^oC
In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500^oC
APPLIED SURFACE SCIENCE ; 270 ; 319-323
2013-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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