A platform for research: civil engineering, architecture and urbanism
Conversion of Y3(Al,Ga)5O12:Tb^3^+ to Y2Si2O7:Tb^3^+ thin film by annealing at higher temperatures
Conversion of Y3(Al,Ga)5O12:Tb^3^+ to Y2Si2O7:Tb^3^+ thin film by annealing at higher temperatures
Conversion of Y3(Al,Ga)5O12:Tb^3^+ to Y2Si2O7:Tb^3^+ thin film by annealing at higher temperatures
Yousif, A. (author) / Swart, H. C. (author) / Ntwaeaborwa, O. M. (author) / Coetsee, E. (author)
APPLIED SURFACE SCIENCE ; 270 ; 331-339
2013-01-01
9 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|Surface state of Y3(Al,Ga)5O12:Tb phosphor under electron beam bombardment
British Library Online Contents | 2012
|Tribological properties of g-Y2Si2O7 ceramic against AISI 52100 steel and Si3N4 ceramic counterparts
British Library Online Contents | 2009
|Microstructural Evolution of Nanoindented Ag/Si Thin-Film under Different Annealing Temperatures
British Library Online Contents | 2011
|Surface characterization and microstructure of ITO thin films at different annealing temperatures
British Library Online Contents | 2007
|