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    Numerical simulation study of current-voltage characteristics of a Schottky diode with inverse doped surface layer

    New search for: Chand, S.
    New search for: Kaushal, P.
    New search for: Osvald, J.

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    Numerical simulation study of current-voltage characteristics of a Schottky diode with inverse doped surface layer

    New search for: Chand, S.
    New search for: Kaushal, P.
    New search for: Osvald, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Numerical simulation study of current-voltage characteristics of a Schottky diode with inverse doped surface layer

    New search for: Chand, S.
    New search for: Kaushal, P.
    New search for: Osvald, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Numerical simulation study of current-voltage characteristics of a Schottky diode with inverse doped surface layer

    Contributors:

    Chand, S. (author) / Kaushal, P. (author) / Osvald, J. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 454-460

    Publication date:

    2013-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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