A platform for research: civil engineering, architecture and urbanism
MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers
MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers
MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers
Zhang, T.C. (author) / Ni, Q.F. (author) / Liu, X.Z. (author) / Yu, B. (author) / Wang, Y.X. (author) / Zhang, Y. (author) / Ma, X.P. (author) / Wang, Y.B. (author) / Xu, Y. (author) / Fu, Y.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
British Library Online Contents | 2000
|Growth and characterization of AlGaAsSb by MOCVD
British Library Online Contents | 1995
|Infrared photoreflectance spectroscopy of AlGaAsSb-, InGaSb-based quantum wells
British Library Online Contents | 2003
|Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
British Library Online Contents | 2001
|British Library Online Contents | 2004
|