A platform for research: civil engineering, architecture and urbanism
Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
Enhanced performance of indium zinc oxide thin film transistor by yttrium doping
Ting, C. C. (author) / Chang, S. P. (author) / Li, W. Y. (author) / Wang, C. H. (author)
APPLIED SURFACE SCIENCE ; 284 ; 397-404
2013-01-01
8 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electrical performance and stability of tungsten indium zinc oxide thin-film transistors
British Library Online Contents | 2018
|Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors
British Library Online Contents | 2012
|Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing
British Library Online Contents | 2015
|British Library Online Contents | 2010
|Scandium, Yttrium and Indium in Oxide Glasses
British Library Online Contents | 1994
|