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High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
Naab, B. D. (author) / Himmelberger, S. (author) / Diao, Y. (author) / Vandewal, K. (author) / Wei, P. (author) / Lussem, B. (author) / Salleo, A. (author) / Bao, Z. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 25 ; 4663-4667
2013-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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