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Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells
Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells
Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 1713-1717
2013-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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