Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells: Fid-Bau Portal

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Wang, T. S. / Tsai, J. T. / Lin, K. I. / Hwang, J. S. / Lin, H. H. / Chou, L. C.

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Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Wang, T. S. / Tsai, J. T. / Lin, K. I. / Hwang, J. S. / Lin, H. H. / Chou, L. C.

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Wang, T. S. / Tsai, J. T. / Lin, K. I. / Hwang, J. S. / Lin, H. H. / Chou, L. C.

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Document information

Title:

Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells

Contributors:

Wang, T. S. (author) / Tsai, J. T. (author) / Lin, K. I. (author) / Hwang, J. S. (author) / Lin, H. H. (author) / Chou, L. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 147 ; 131-135

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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